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FDP65N06

Manufacturer:

On Semiconductor

Mfr.Part #:

FDP65N06

Datasheet:
Description:

MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 135 W 60 V Continuous Drain Current (ID):65 A 43 nC

ParameterValue
Voltage Rating (DC)60 V
Length10.67 mm
Width4.83 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height16.51 mm
PackagingTube
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Current Rating65 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation135 W
Power Dissipation135 W
Number of Channels1
Input capacitance2.17 nF
Continuous Drain Current (ID)65 A
Rds On Max16 mΩ
Drain to Source Voltage (Vdss)60 V
Turn-On Delay Time24 ns
Turn-Off Delay Time98 ns
Element ConfigurationSingle
Fall Time52 ns
Rise Time94 ns
Gate Charge43 nC
Drain to Source Resistance16 mΩ
Nominal Vgs2 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)60 V
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage2 V
FET Type(Transistor Polarity)N-Channel

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